智能家居通讯网络架构的研究

可靠、适用的通讯网络是智能家居的重要组成环节,一个典型的家居通讯网络可以由终端、主网关、服务器、客户端所组成。其中终端采用TI公司推出的具有ZigBee协议的微处理器CC2530,并构成ZigBee局域网,包括节点、路由器、协调器;主网关采用联发科7688硬件+OpenWrt系统,使用中移物联网开放平台做服务器后台,实现数据的交互。通过温湿度状态显示以及排插远程操作的测试,验证了智能家居通信网络架构的可行性。     

微服务在智慧城市平台建设中的应用初探

我国目前对智慧城市建设的投入越来越大,各类平台软件层出不穷,但各种问题也随之涌现,如何彻底消除信息孤岛,形成真正的信息互联互通,仍然是需要进行进一步研究的。在这种背景下,通过分析智慧城市建设的现状,介绍了微服务设计理念,给出了微服务在软件平台建设中进行应用的实现方式,最后对微服务的优势与劣势进行了探讨。     

基于APT攻击的网络检测系统算法优化

以Snort为核心,以分层分布式网络为框架构建基于APT攻击的入侵检测模块的防御系统,并提出了一套新的OTN动态匹配算法。首先,介绍了APT攻击的特点。然后提出了一套针对APT攻击的基于Snort的防御检测模型,并在Snort原有的三步动态调节算法的基础上,提出了一个新的动态匹配算法。最后,用原有的动态匹配算法与改进型动态匹配算法做对比实验,对最终结果进行对比分析。得出结论,采用新型动态匹配算法的分布式网络检测系统对网络安全防护的功能有明显的提高。     

DSC analyses of static and dynamic precipitation of an Al–Mg–Si–Cu aluminum alloy

In the present investigation, both static and dynamic precipitations of an Al–Mg–Si–Cu aluminum alloy after solid-solution treatment(SST)were comparatively analyzed using differential scanning calorimetry(DSC). Dynamic aging was performed in the SST alloy through equal channel angular pressing(ECAP) at different temperatures of room temperature, 110, 170, 191 and 300 1C. For comparison, static artificial aging was conducted in the SST alloy at 191 1C with two aging times of 4 and 10 h. The DSC analyses reveal that the dynamic precipitation has occurred in the ECAPed samples, while the activation energies associated with the strengthening precipitates in the dynamic samples are considerably higher than the energies in the SST and static aged samples. The higher activation energies are probably attributed to the smaller grains and higher dislocation density developed after ECAP. The results in the present investigation allow the prediction of the type of the dynamic precipitates to influence the strength of the ultrafine grained alloy during ECAP at various temperatures.     

Synthesis of few layer single crystal graphene grains on platinum by chemical vapour deposition

The present competition of graphene electronics demands an ef fi cient route which produces high quality and large area graphene. Chemical vapour deposition technique, where hydrocarbons dissociate in to active carbon species and form graphene layer on the desired metal catalyst via nucleation is considered as the most suitable method. In this study, single layer graphene with the presence of few layer single crystal graphene grains were grown on Pt foil via chemical vapour deposition. The higher growth temperature changes the surface morphology of the Pt foil so a delicate process of hydrogen bubbling was used to peel off graphene from Pt foil samples with the mechanical support of photoresist and further transferred to Si O2/Si substrates for analysis. Optical microscopy of the graphene transferred samples showed the regions of single layer along with different oriented graphene domains. Two type of interlayer stacking sequences, Bernal and twisted, were observed in the graphene grains.The presence of different stacking sequences in the graphene layers in fl uence the electronic and optical properties; in Bernal stacking the band gap can be tunable and in twisted stacking the overall sheet resistance can be reduced. Grain boundaries of Pt provides low energy sites to the carbon species, therefore the nucleation of grains are more at the boundaries. The stacking order and the number of layers in grains were seen more clearly with scanning electron microscopy. Raman spectroscopy showed high quality graphene samples due to very small D peak. 2D Raman peak for single layer graphene showed full width half maximum(FWHM) value of 30 cm-1. At points A, B and C, Bernal stacked grain showed FWHM values of 51.22, 58.45 and 64.72 cm-1, while twisted stacked grain showed the FWHM values of 27.26, 28.83 and 20.99 cm-1,respectively. FWHM values of 2D peak of Bernal stacked grain showed an increase of 20–30 cm-1 as compare to single layer graphene which showed its dispersive nature and con fi rmed Bernal sequence. On the other hand, the slightest decrease in FWHM values of 2D peak in twisted grain comparing to single layer con fi rmed the twisted sequence of grains. Atomic force microscopy analysis showed an increasing trend in grain height pro fi le with an increase in the number of layers.     

Computing along the axon

A special form of spiking neural P systems, called axon P systems, corresponding to the activity of Ranvier nodes of neuron axon, is considered and a class of SN-like P systems where the computation is done along the axon is introduced and their language generative power is investigated.     

Probabilistic transitions for P systems

In this paper we use the abstract syntax and the structural operational semantics of the P systems given in ［1］, and add probabilities to the rules and to the communication targets. We take into account the number of possible combinations of rules which can be applied in a computation step, as well as the consumption degree of the current resources.     

How to express tumours using membrane systems

In this paper we discuss the potential usefulness of membrane systems as tools for modelling tumours. The approach is followed both from a macroscopic and a microscopic point of view. In the first case, one considers the tumour as a growing mass of cells, focusing on its external shape. In the second case, one descends to the microscopic level, studying molecular signalling pathways that are crucial to determine if a cell is cancerous or not. In each of these approaches we work with appropriate variants of membrane systems.     

Dielectric properties, electrical modulus and current transport mechanisms of Au/ZnO/n-Si structures

Au/Zn O/n-Si(MIS)structures were fabricated by using the RF sputtering method and their complex dielectric constant(ε~*=ε’-jε’’),electric modulus(M~*=M′+j M’’)and electrical conductivity(σ=σ_(dc)+σ_(ac))values were investigated as a function of frequency(0.7 k Hz-1 MHz)and voltage(-6–(+6 V))by capacitance-voltage(C-V)and conductance-voltage(G/ω-V)measurements to get more information on the conduction mechanisms and formation of barrier height between Au and n-Si.The lnσ-Lnf plots have two different regions corresponding to low-intermediate and high frequencies.Such behavior of lnσ-lnf plots shows that the existence of two different conduction mechanisms(CMs)at low-intermediate and high frequencies.Moreover,the reverse bias saturation current(I_o),ideality factor(n),barrier height(Φ_(Bo))were determined from the forward bias I-V data and they were found as a strong function of temperature.The value of n especially at low temperature is considerably higher than unity.The values ofΦ_(B0)and standard deviation(σ_s)were found from the intercept and slope ofΦ_(Bo)-q/2k T plots as 0.551 e V and 0.075 V for the region I(80–220 K)and 1.126 e V and 0.053 V for the region II(220–400 K),respectively.The values ofΦ_(Bo)and effective Richardson constant(A~*)were found from slope and intercept of activation energy plots as 0.564 e V and 101.084 Acm~(-2)K~(-2)for the region I and 1.136 e V and41.87 Acm~(-2)K~(-2)for the region II,respectively.These results confirm that the current-voltage-temperature(I-V-T)characteristics of the fabricated Au/Zn O/n-Si SBDs can satisfactorily be explained on the basis of TE theory with double GD of the BHs.     

不同坡度单体山丘风速地形修正系数与 越山风效应风洞试验研究

为了研究不同坡度单体山丘风速地形修正系数与越山风效应对输电塔线结构的影响,对比了国内外5种规范取值与风洞试验测试结果,分析了不同坡度山丘山顶位置和迎、背、侧风坡面风速地形修正系数,并探讨了山丘风场竖向风速分量与紊流度变化特性.研究结果表明:5种规范中我国建筑结构荷载规范与高耸结构设计规范对不同坡度山丘山顶处的风速地形修正系数的取值最大;山顶位置风速地形修正系数并非完全随坡度增大而增加,坡度大于0.577之后达到1时,风速地形修正系数反而减小;现有的拟合公式计算山丘表面区域的侧风坡风速修正系数取值偏小,而计算上部区域的风速修正系数取值却明显偏大;山体坡度越大则竖向风速分量极大值反而越小,三类坡度山丘在迎风坡和背风坡测试的最大竖向风速分量与参考来流风速的比值分别为0.523和-0.542;山体坡度越大则表面紊流度越大,特别是陡峭山坡背风侧紊流度比较大,坡度为1时山丘背风侧0.6倍山体高度处的紊流度可高达35%.